jiangsu changjiang ele ctronics technology co., ltd sop8 plastic-encapsulate mosfets cj q 4953 p-channel 30-v(d-s) mosfet maximum ratings (t a =25 unless otherw ise not ed) parameter symbol value unit drain-source voltag e v ds -30 gate-source voltag e v gs 20 v continuous dr ain c urrent ( t 10s) i d - 5 a powe r diss ipation ( t 10s) p d 1.25 w thermal resistance from jun c tion to ambient ( t 10s) r ja 100 /w junction t e mperature t j 150 storage temperature t stg -55~+150 sop8 v (br)dss r ds(on) max i d -30 v 60 m @ -10 v ? -5 a ? 90 m -4.5 v ? @ marking: equivalent circuit www.cj-elec.com 1 g , ma r ,201 6 solid dot = green molding compound device, if none,the normal device. q4953 = device code yy =da t e code solid dot = pin1 indicator 1 23 4 5 6 7 8 s1 g1 s 2 g2 d2 d2 d1 d1
para meter symbol test condition min typ max units static drain-s ource breakdown voltage v (b r)dss v gs =0 v, i d = -250a -30 v gate-thresho ld voltage v gs( th) v ds =v gs , i d = -250a -1.0 -1.5 v gate-bod y leakage i gss v ds =0 v, v gs =20v 10 0 na z ero gate voltage drain current i ds s v ds = -30v, v gs =0 v -1 a v gs = -10v, i d =-4.9a 50 60 drain-s ource on-resistance a r ds (on ) v gs = -4.5v, i d = -3.7a 66 90 m? f orward transconductance a g fs v ds = -10v, i d =-4.9a 6.0 s diod e forward voltage a v sd i s = -1.7a,v gs =0 v -1.2 v dy namic b t otal gate charge q g 25 gate-source c harge q gs 4 gate-drain charge q gd v ds = -15v,v gs = -10v,i d = -4.9a 2 nc t urn-on delay time t d ( on) 15 rise time t r 20 t urn-off delay time t d( off) 80 fall time t f v dd = -15v,r l =1 5 ?, i d -1a, v gen = -10v,r g =6 ? 40 ns no tes : a. pulse test : pulse width 300s, duty cycle 2%. b. guaranteed by design, not su bject to production testing. 0 2 6 ) ( 7 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 a t =25 / unless otherwise specified www.cj-elec.com 2 g,mar,2016
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 e-5 -1e-4 -1e-3 -0.01 -0.1 -1 -10 -0 -1 -2 -3 -4 -0 -1 -2 -3 -4 -5 -0 -2 -4 -6 -8 -10 20 40 60 80 100 -2 -4 -6 -8 -10 20 40 60 80 100 120 140 -0 -1 -2 -3 -4 -5 -0 -5 -10 -15 -20 -25 t a =25 pulsed t a =25 pulsed i s v sd t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed t a =25 pulsed transfer charact eristics drain current i d (a) gate to source voltage v gs (v) v gs =-4.5v v gs =-10v i d r ds(on) on-resistance r ds(on) (m ) drain current i d (a) v gs r ds(on) i d =-4.3a on-resistance r ds(on) (m ) gate to source voltage v gs (v) -10v -8v -5v v gs =-4.5v v gs =-4.0v v gs =-3.5v output c haracteristics drain current i d (a) drain to source voltage v ds (v) 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 3 g,mar,2016
www.cj-elec.com 4 g,mar,2016 sop8 package outline dimensions sop8 suggested pad layout mi n max mi n max a a1 0.100 0.250 0 .004 0.010 a2 1.3 50 1.5 5 0 0.053 0.0 61 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 d 4.800 5.000 0.189 0.197 e e 5.800 6.200 0.228 0.244 e1 3.800 4.000 0.150 0.157 l 0.400 1.270 0.016 0.050 0 8 0 8 sy m bo l dimensions in millimeters dimensions in inches 0.050bsc 1.270bsc 1.350 1.750 0.053 0.069
6 2 3 7 d s h d q g 5 h h o z z z f m h o h f f r p * 0 d u 5 ( ( / 5 h h o 6 l ] h % r [ % r [ 6 l ] h p p & d u w r q & d u w r q 6 l ] h p p * : n j s f v l q f k s f v ? ? s f v ? ? 5 h h o 2 s w l r q
' l d ' l p h q v l r q v d u h l q p l o o l p h w h u ' ' ' * + , : : ? 5 5 5
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